As a last resort, try different values for the Step Ceiling in hopes that the simulator will "jump" over a convergence problem. Failure to converge at the first time step is an indication of a dynamic range problem.Ĩ. As a rule of thumb, the absolute tolerances should not be more than 9 orders of magnitude smaller than typical signals present in the circuit. In case of doubt the user can rely on the well-written help function. Dening a new problem is an easy task, thanks to a clean and intuitive user interface. This is most important for ABSTOL since its default is 1pA. With AMPS it is possible to work on several problems simultaneously, and each device (or case as it is called in AMPS) is shown in a separate window. Loosen the absolute tolerances for power circuits. Increase the ITL4 option to 40 to increase the possible number of iterations at each time step.ħ. Use the Step Ceiling to limit large time step predictions.Ħ. Use an ESR resistor with ideal inductors. Be sure to give source and drain areas for all MOSFETs, so that the junction capacitors and overlap capacitors are modeled.ĥ. We established the calculation formulas for the short-circuit current and open-circuit voltage, and then studied and analyzed the optimization thickness of the semiconductor, doping concentration, and junction depth with simulation of the transport process of. Do not use ideal models which do not have capacitances.ģ. A novel multi-source energy harvester based on solar and radioisotope energy sources is designed and simulated in this work.
When specifying nonlinear device model parameters, be sure that a complete capacitance model is specified. Examine the simulator messages to look for clues as to why the problem occurs.Ģ. To solve these convergence problems, try applying the following possible workarounds or solutions to your design.ġ.
Troubleshooting guidelines for Transient convergence failure (time step too small error) For our research we chose a silicon photodetector Hamamatsu 1337. Due to lateral ohmic voltage drops, the electric potential at the cell surface is shown to be higher in the middle between two busbars or fingers than close to them.Troubleshooting guidelines for Transient convergence failure Problem This paper, for the first time, suggests a method of determining internal quantum efficiency of an opaque p+nn+ photodetector and some of its characteristics based on a comparison between experimental measurements of photodetectors voltage-current characteristics and characteristics calculated with PC1D. Finally, one kind of large-scale lateral effect, the voltage distribution across the solar cell area, is analysed. Then, the current-voltage characteristics obtained by the distributed circuit model are compared with those obtained from measurements. First, the design of the distributed circuit model is described. The presented model is used to simulate the distributed current flow in a solar cell.
#PC1D EXAMPLE PROBLEM SOFTWARE#
To calculate the characteristics of the circuit, we use the freely available software LTspice IV (Linear Technology Corp). The circuit is constructed of different unit elements based on the one-diode model.
In this paper, we use a distributed circuit model to investigate lateral inhomogeneity effects on silicon wafer solar cells. They therefore neglect effects of local inhomogeneities or large scale phenomena such as lateral transport to fingers or busbars. The easy-to-understand user interface for problem setup and evaluation makes this 2D program a natural companion to PC1D. Solar cell models implemented in simulation packages (for example Sentaurus TCAD) are typically restricted either to only one or two dimensions, or to small scales.